| Year 1999 |
LuxNet Corporation was established in Fremont, California, USA, with a capital of 8 million USD by Dr. Hsing Kung. As a III-V compound semiconductor company, it focused on developing LED products.
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| Year 2000 |
Made used of technical skills on the III-V compound semiconductor field, LuxNet started developing semiconductor lasers and detectors components for optical communication industry. Increased capital to 18 million USD.
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| Year 2001 |
Established manufacturing facility in Lung-Tan Hi Tech Industrial park, Taoyuan, Taiwan, with 90 million NTD capital.
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| Year 2002 |
LuxNet Corporation Taiwan became a limited company.
Mass production ready for 850nm VCSEL, 1310nm PD, and FP Laser.
ISO 9001 certified.
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| Year 2003 |
Relocated headquarters back to Taiwan.
Named Dr. James Chang as the president
Increased 20.5 million NTD , with total capital of 110.5 million NTD.
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| Year 2004 |
Built in-house OSA line for making ROSA and TOSA
Increased 147.1 million NTD, with total capital of 257.6 million NTD
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| Year 2005 |
Established in-house TO46 line, company became profitable in Q4.
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| Year 2006 |
Developed 850nm SM VCSEL for optical mouse application.
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| Year 2007 |
Developed 850nm and 1310nm 10G photodetectors.
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| Year 2008 |
Expanded to new headquarters in Jhong-Li industrial park to focus on OSA and module manufacturing.
Kept Long-tan Hi Tech factory as dedicated chip development and production facility.
Established Toptrans Corporation in Suzhou, China, to OEM module products.
Increased 47 million NTD, with total capital of 304.6 million NTD.
Made presence in FTTH PON market Developed 850nm and 1310nm 10G ROSA.
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| Year 2009 |
Established in-house TO-56 line for TOSA and BOSA line.
Increased 8.7 million NTD, with total capital of 313.4 million NTD.
Developed 2.5G, 1310nm; 1490nm; and 1550nm DFB laser Products.
Developed 2.5G DFB GPON ONU and OLT products.
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| Year 2010 |
Increased 9.6 million NTD, brought total capital to 323.1 million NTD.
Developed 6G FP TOSA and ROSA for 4 G LTE project.
Developed dual wavelength of 10G light peak detector for optical USB application.
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| Year 2011 |
Became a listed company at over-the-counter market.
Developed 2.5G 1310/1550nm APD chip.
Developed 10G1310nm Laser chip.
Developed 10G 850nm ROSA.
Developed 10G 850nm VCSEL TOSA.
Developed SMF 1310nm FP OC48 SR、SMF 1310nm DFB OC48 IR、SMF
1310nm DFB/APD OC48 LR、MMF 850nm 8FC SFP+、MMF 850nm 10GBASE SR SFP+.
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| Year 2012 |
The Hejiang Plant was completed.The revenue reached NT$2.15 billion acchieved a new high.
Developed 10G 1310nm DFB chip.
Developed 10G FP TOSA、10G/14G VCSEL TOSA、10G DFB TOSA.
Developed 40G SR4 Optical Engine.
Developed 10G LRL SFP+、10G LR SFP+、10G SR SFP+、40G SR4 QSFP+.
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| Year 2013 |
Completed the merge of Jhongli and Longtan two factories and moved to Hejiang factory production
and operation in March, 2013.
Granted Deloitte Technology Fast 500TM 2013.
Developed 1310nm PIN PD.
Developed 25G 1310nm DFB chip.
Developed QSFP+ 40G PSM4 mini TOSA/ROSA.
Developed 48G mini SAS HD.
Developed QSFP+ 40G PSM4.
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| Year 2014 |
Granted again Deloitte Technology Fast 500TM 2014.
Pass through the certificate of Corporate Governance System CG6008 General Assessment.
Developed 1310nm 25G PIN.
Developed 40G PSM4 Mini TOSA.
Developed 40G PSM4 ROSA、40G 300m SR4 opitcal engine.
Developed 10G LR-Lite SFP+ Tranceiver、40G BASE PSM4 QSFP+.
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| Year 2015 |
Ranked among top 5% of listed companies in a “1st Corporate Governance Evaluation”
conducted by the Taiwan Stock Exchange and Taipei Exchange.
Developed 850nm 25G PIN.
Developed CWDM CW-DFB chip.
Developed 10G EPON BOSA.
Developed 25G 1310nm DFB TOSA.
Developed 25G 1310nm PIN-TIA ROSA.
Developed 100G CWDM4 TOSA.
Developed 40G QSFP+ eSR4 COB.
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| Year 2016 |
Ranked among top 5% of listed companies in a “ 2nd Corporate Governance Evaluation”
conducted by the Taiwan Stock Exchange and Taipei Exchange.
Developed 10G EPON 1270nm DFB chip.
Developed 1490nm OLT DFB chip.
Developed 1310nm 10G super TIA PIN PD.
Developed 100G silicon photonic module assembly technology.
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| Year 2017 |
Ranked among top 5% of listed companies in a “3rd Corporate Governance Evaluation”
Developed 10G EPON 1577nm APD.
Developed Gen2 Mini TOSA 40G PSM4/ROSA 40G PSM4.
Developed Gen2 40G QSFP+PSM4.
ISO14001:2015 certified.
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| Year 2018 |
Ranked among top 5% of listed companies in a “4th Corporate Governance Evaluation”
Issued a private placement of ordinary shares 19.5 million NTD, with total capital of 929.2 million NTD in February.
Increased capital by 100 million NTD in cash, with total capital of 1.029 billion NTD In April.
Developed 25G 1310/1550nm PIN array chip.
Developed 25G 850nm PIN array chip.
Developed 25G CWDM DFB chip.
ANSI/ESD S20.20-2014 certified.
ISO45001:2018 certified.
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| Year 2019 |
Developed 10G APD ROSA.
Developed 10G O-Band CWDM DFB LD.
Developed 10G 1550nm DFB LD.
Developed 40mW O-Band CWDM CW DFB LD.
Developed 25G 850nm 1x4 array.
Developed 25G 1310/1550nm APD.
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| Year 2020 |
Increased capital by 147 million NTD in cash, with total capital of 1.202 billion NTD in January.
Developed 25G CWDM 6 wavelengths TOCAN.
Developed 25G 1350/1370nm CWDM DFB LD.
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| Year 2021 |
Year 2021 Issued a private placement of ordinary shares 130 million and canceled new restricted employee shares
1.06 million, with total capital of 1.329 billion NTD in May.
Developed 25G 1310nm PIN PD.
Developed BOX type EML TOSA packaging technology.
Developed 400G silicon photonic module assembly technology.
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| Year 2022 |
Developed the technology of 40/53mW CWDM LD process and applied to 400G AI data center.
Developed 50G PIN PD.
Developed TO33 TOCAN Packaging technology.
Developed TO38 TOCAN Packaging technology.
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| Year 2023 |
Increased capital by 85 million NTD in cash, with total capital of 1.408 billion NTD in December.
Developed the technology of 70mW CWDM LD process, applied to 800G AI data center.
Developed CWDM TOSA for CPO External Laser Sources.
Developed Active lens alignment assembly technology.
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| Year 2024 |
Developed the technology of 100mW CWDM LD process, applied to 1.6T AI data center.
Developed 800G silicon photonic module assembly technology.
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